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document number: 93178 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 04-aug-08 1 fast recovery diodes (hockey puk version), 600 a sd603c..c series vishay semiconductors features ? high power fast recovery diode series ? 1.0 to 2.0 s recovery time ? high voltage ratings up to 2200 v ? high current capability ? optimized turn-on and turn-off characteristics ? low forward recovery ? fast and soft reverse recovery ? press puk encapsulation ? case style conform to jedec b-43 ? maximum junction temperature 125 c ? lead (pb)-free ? designed and qualified for industrial level typical applications ? snubber diode for gto ? high voltage freewheeling diode ? fast recovery rectifier applications product summary i f(av) 600 a b-43 rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 600 a t hs 55 c i f(rms) 942 a t hs 25 c i fsm 50 hz 8320 a 60 hz 8715 i 2 t 50 hz 346 ka 2 s 60 hz 316 v rrm range 400 to 2200 v t rr 1.0 to 2.0 s t j 25 c t j - 40 to 125
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93178 2 revision: 04-aug-08 sd603c..c series vishay semiconductors fast recovery diodes (hockey puk version), 600 a electrical specifications voltage ratings type number voltage code v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i rrm maximum at t j = 125 c ma sd603c..s10c 04 400 500 45 08 800 900 10 1000 1100 sd603c..s15c 12 1200 1300 14 1400 1500 16 1600 1700 sd603c..s20c 20 2000 2100 22 2200 2300 forward conduction parameter symbol test conditions values units maximum average forward current at heatsink temperature i f(av) 180 conduction, half sine wave double side (single side) cooled 600 (300) a 55 (75) c maximum rms current i f(rms) 25 c heatsink temperature double side cooled 942 a maximum peak, one-cycle non-repetitive forward current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 8320 t = 8.3 ms 8715 t = 10 ms 100 % v rrm reapplied 7000 t = 8.3 ms 7330 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 346 ka 2 s t = 8.3 ms 316 t = 10 ms 100 % v rrm reapplied 245 t = 8.3 ms 224 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 3460 ka 2 ? s low level value of threshold voltage v f(to)1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 1.36 v high level value of threshold voltage v f(to)2 (i > ? x i f(av) ), t j = t j maximum 1.81 low level of forward slope resistance r f1 (16.7 % x ? x i f(av) < i < ? x i f(av) ), t j = t j maximum 0.87 m ? high level of forward slope resistance r f2 (i > ? x i f(av) ), t j = t j maximum 0.67 maximum forward voltage drop v fm i pk = 1885 a, t j = 25 c; t p = 10 ms sinusoidal wave 2.97 v recovery characteristics code maximum value at t j = 25 c test conditions typical values at t j = 125 c t rr at 25 % i rrm (s) i pk square pulse (a) di/dt (a/ s) v r (v) t rr at 25 % i rrm (s) q rr (c) i rr (a) s10 1.0 1000 25 - 30 2.0 45 34 s15 1.5 3.2 87 51 s20 2.0 3.5 97 55 i fm t rr dir dt i rm(rec) q rr t
document number: 93178 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 04-aug-08 3 sd603c..c series fast recovery diodes (hockey puk version), 600 a vishay semiconductors note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.076 k/w dc operation double side cooled 0.038 mounting force, 10 % 9800 (1000) n (kg) approximate weight 83 g case style see dimensions - link at the end of datasheet b-43 ? r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.006 0.007 0.005 0.005 t j = t j maximum k/w 120 0.008 0.008 0.008 0.008 90 0.010 0.010 0.011 0.011 60 0.015 0.015 0.016 0.015 30 0.026 0.025 0.026 0.025
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93178 4 revision: 04-aug-08 sd603c..c series vishay semiconductors fast recovery diodes (hockey puk version), 600 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - forward power loss characteristics fig. 6 - forward power loss characteristics 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 30 60 90 120 180 averag e forw ard current (a) maximum allowable heatsink temperature (c) conduction angle sd 6 0 3 c . . c se r i e s (single side cooled) r (dc) = 0.076 k/ w thj-hs 60 70 80 90 100 110 120 130 0 100 200 300 400 500 30 60 90 180 dc 120 avera g e forwa rd current (a) maximum allowable heatsink temperature (c) conduction period sd 6 0 3 c . . c se r i e s (single side cooled) r (dc) = 0.076 k/ w thj-hs 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 30 60 90 120 180 averag e forwa rd current (a) maximum allowable heatsink temperature (c) conduction angle sd 6 0 3 c . . c se r i e s (double side cooled) r (dc) = 0.038 k/ w thj-hs 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 30 60 90 180 dc 120 average forward current (a) maximum allowable heatsink temperature (c) conduction period sd603c..c se rie s (double side cooled) r (dc) = 0.038 k/ w thj-hs 0 200 400 600 800 1000 1200 1400 1600 1800 0 100200300400500600 180 120 90 60 30 average forward current (a) maximum average forward power loss (w) rm s li m i t sd603c..c series t = 125c j conduction angle 0 500 1000 1500 2000 2500 0 200 400 600 800 1000 average forward current (a) rm s li m i t maximum average forward power loss (w) dc 180 120 90 60 30 sd 6 0 3 c . . c se r i e s t = 125c j conduc tion period
document number: 93178 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 04-aug-08 5 sd603c..c series fast recovery diodes (hockey puk version), 600 a vishay semiconductors fig. 7 - maximum non- repetitive surge current single and double side cooled fig. 8 - maximum non- repetitive surge current single and double side cooled fig. 9 - forward voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - typical forward recovery characteristics 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 110100 pe a k ha l f s ine wave forward current (a) number of equal amplitude half cycle current pulses (n) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j sd603c..c series at any rated load condition and with ra ted v ap p lied follow ing surg e. rrm 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 pulse train duration (s) pe a k ha lf s ine wave forward current (a) maximum non repetitive surge current versus pulse train duration. sd 6 0 3 c . . c se r i e s in it ia l t = 125 c no volt a g e re a pp lie d rated v reapplied j rrm 10 100 1000 10000 .5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 instantaneous forward voltage (v) insta nta ne ous forwa rd current (a) t = 2 5 c j t = 125 c j sd603c ..c se rie s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 sq u a r e w a v e p u l se d u r a t i o n ( s) thj-hs transient thermal imped ance z (k/ w) st e a d y st a t e v a l u e : r = 0.076 k/ w (single side cooled) r = 0.038 k/ w (double side cooled) (dc operation) thj-hs thj-hs sd 6 0 3 c . . c se r i e s 0 20 40 60 80 100 0 200 400 600 800 100012001400160018002000 forward recovery (v) t = 1 2 5 c t = 2 5 c j j ra t e o f f ri se o f fo r w a r d c u r r e n t d i / d t ( a / u se c ) sd 6 0 3 c . . s2 0 c se r i e s i v fp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93178 6 revision: 04-aug-08 sd603c..c series vishay semiconductors fast recovery diodes (hockey puk version), 600 a fig. 12 - recovery time characteristics fig. 13 - recovery charge characteristics fig. 14 - recovery current characteristics fig. 15 - recovery time characteristics fig. 16 - recovery charge characteristics fig. 17 - recovery current characteristics 1.6 1.7 1.8 1.9 2 2.1 2.2 0 0 1 0 1 ra te of fa ll of forw a rd c urrent - d i/ d t (a/ s) m a x i m u m re v e r se re c o v e r y ti m e - tr r ( s) i = 1000 a sq u a r e pu l se 500 a 250 a fm sd603c..s10c se ries t = 125 c; v = 30v r j 20 30 40 50 60 70 80 90 100 110 120 130 10 20 30 40 50 60 70 80 90 100 m a x im u m re v e r se re c o v e r y c h a r g e - q r r ( c ) ra t e o f fa l l o f fo r w a r d c u r r e n t - d i / d t ( a / s) i = 1000 a sq u a r e p u l se fm 500 a 250 a sd 6 0 3 c . . s1 0 c se r i e s t = 125 c; v = 30v r j 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) ra t e o f fa l l o f fo r w a r d c u r r e n t - d i / d t ( a / s) i = 1000 a sq u a r e pu l se fm 500 a 250 a sd 6 0 3 c . . s1 0 c se r i e s t = 1 2 5 c ; v = 3 0 v r j 2 2.5 3 3.5 4 0 0 1 0 1 rate of fall of forward current - di/dt (a/s) ma ximum reverse rec overy time - trr (s) i = 1000 a sq u a r e p u l s e fm 500 a 250 a sd603c..s15c s eries t = 125 c; v = 30v r j 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery charge - qrr (c) rate of fall of forward current - di/dt (a/s) i = 1000 a sq u a r e p u l se fm 500 a 250 a sd 6 0 3 c . . s1 5 c se r i e s t = 125 c; v = 30v r j 20 30 40 50 60 70 80 90 100 110 120 130 140 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/s) i = 1000 a sq u a r e pu l se fm 500 a 250 a sd 6 0 3 c . . s1 5 c s eries t = 125 c; v = 30v r j
document number: 93178 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 04-aug-08 7 sd603c..c series fast recovery diodes (hockey puk version), 600 a vishay semiconductors fig. 18 - recovery time characteristics fig. 19 - recovery charge characteristics fig. 20 - recovery current characteristics fig. 21 - maximum total energy loss per pulse characteristics 2 2.5 3 3.5 4 4.5 0 0 1 0 1 rat e of fa ll of forwa rd current - di/ d t (a/ s) maximum reverse recovery time - trr (s) i = 1000 a sq u a r e p u l s e 500 a 250 a fm sd603c..s20c s eries t = 125 c; v = 30v r j 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90 100 ma ximum reverse recovery charge - qrr (c) rate of fall of forward current - di/dt (a/s) i = 1000 a sq u a r e p u l se 500 a 250 a fm sd 6 0 3 c . . s2 0 c se r i e s t = 125 c; v = 30v r j 20 30 40 50 60 70 80 90 100 110 120 130 140 150 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/s) i = 1000 a sq u a r e p u l s e fm 500 a 250 a sd 6 0 3 c . . s2 0 c se r i e s t = 125 c; v = 30v r j 1e1 1e2 1e3 1e4 1 2 0.1 pu l se ba se w i d t h ( s) peak forward current (a) 4 dv/dt = 1000v/s sinusoid a l pulse 20 joules per pulse 10 0.4 0.2 0.04 0.02 0.01 sd603c..s10c series t = 1 2 5 c , v = 1 1 2 0 v j rrm tp 1e11e21e31e4 1e11e21e31e4 1 2 0.1 pu lse ba se w i d t h ( s) 4 20 joules per pulse 10 0.4 0.2 trapezoidal pulse dv/dt = 1000v/s; di/dt=50a/s sd603c..s10c series t = 125c, v = 1120v j rrm tp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93178 8 revision: 04-aug-08 sd603c..c series vishay semiconductors fast recovery diodes (hockey puk version), 600 a fig. 22 - maximum total energy loss per pulse characteristics fig. 23 - maximum total energy loss per pulse characteristics 1e1 1e2 1e3 1e4 1 2 0.1 pu l se ba se w i d t h ( s) pea k fo rw a rd c urrent (a) 4 dv/dt = 1000v/s si n u so i d a l pu l s e 20 joules per pulse 10 0.4 0.2 0.04 0.02 sd 6 0 3 c . . s1 5 c se r i e s t = 1 2 5 c , v = 1 7 6 0 v j rrm tp 1e11e21e31e4 1e1 1 e2 1 e3 1 e4 1 2 pulse ba se w id t h ( s) 4 20 joules per pulse 10 0.4 0.2 trapezoidal pulse dv/dt = 1000v/s; di/ dt=50a/ s sd603c ..s15c series t = 125c, v = 1760v j rrm tp 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 0.1 pu l se ba se w i d t h ( s) pe a k fo rw a rd c urre n t ( a) 4 dv/dt = 1000v/s sinusoida l pulse 20 joules per pulse 10 0.4 0.2 0.04 sd 6 0 3 c . . s 20c s eries t = 125c , v = 1760v j rrm tp 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) 4 20 joules per pulse 10 0.4 trapezoidal pulse dv/ dt = 1000v/ s; di/dt=50a/s t = 125c , v = 1760v sd 6 0 3 c . . s2 0 c se r i e s j rrm tp
document number: 93178 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 04-aug-08 9 sd603c..c series fast recovery diodes (hockey puk version), 600 a vishay semiconductors ordering information table 1 - diode 2 - essential part number 3 - 3 = fast recovery 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 -t rr code (see recovery characteristics table) 7 - c = puk case b-43 device code 5 13 24 67 sd 60 3 c 22 s20 c links to related documents dimensions http://www.vishay.com/doc?95249
document number: 95249 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-nov-07 1 b-43 outline dimensions vishay semiconductors dimensions in millimeters (inches) 42 (1.65) dia. max. 40.5 (1.59) dia. max. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specifications) 3.5 (0.14) dia. nom. x 1.8 (0.07) deep min. both ends 0.8 (0.03) min. both ends 25.3 (1) dia. max. 2 places 14.4 (0.57) 15.4 (0.61)
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